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1

Bias-Engineered Mobility in Advanced FD-SOI MOSFETs

Fernandez, Cristina, Rodriguez, Noel, Ohata, Akiko, Gamiz, Francisco, Andrieu, Francois, Fenouillet-Beranger, Claire, Faynot, Olivier, Cristoloveanu, Sorin

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 429 KB

english, 2013

2

A review of electrical characterization techniques for ultrathin FDSOI materials and devices

Cristoloveanu, Sorin, Bawedin, Maryline, Ionica, Irina

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 5.88 MB

english, 2016

3

EDMOS in ultrathin FDSOI: Impact of the drift region properties

Litty, Antoine, Ortolland, Sylvie, Golanski, Dominique, Dutto, Christian, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.55 MB

english, 2016

4

Fabrication of normally-off GaN nanowire gate-all-around FET with top-down approach

Im, Ki-Sik, Won, Chul-Ho, Vodapally, Sindhuri, Caulmilone, Raphaël, Cristoloveanu, Sorin, Kim, Yong-Tae, Lee, Jung-Hee

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 1.11 MB

english, 2016

5

Ultra-low power 1T-DRAM in FDSOI technology

El Dirani, H., Lee, K.H., Parihar, M.S., Lacord, J., Martinie, S., Barbe, J-Ch., Mescot, X., Fonteneau, P., Broquin, J.-E., Ghibaudo, G., Galy, Ph., Gamiz, F., Taur, Y., Kim, Y.-T., Cristoloveanu, S.,

Journal:

Microelectronic Engineering

Year:

2017

Language:

english

File:

PDF, 1.84 MB

english, 2017

6

Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell

Navarro, Santiago, Navarro, Carlos, Marquez, Carlos, Salazar, Norberto, Galy, Philippe, Cristoloveanu, Sorin, Gamiz, Francisco

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 9.14 MB

english, 2019

7

Theory of the field-assisted photomagnetoelectric effect in thin films: Experiment on n-type GaAs and applications

Kwang Nham Kang, Sorin Cristoloveanu

Journal:

Thin Solid Films

Year:

1984

Language:

english

File:

PDF, 600 KB

english, 1984

8

State-of-the-art and future of silicon on insulator technologies, materials, and devices

Sorin Cristoloveanu

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 322 KB

english, 2000

9

Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

S. Eminente, S. Cristoloveanu, R. Clerc, A. Ohata, G. Ghibaudo

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 476 KB

english, 2007

10

Hot-carrier degradation mechanisms in silicon-On-Insulator MOSFETS

Sorin Cristoloveanu

Journal:

Microelectronics Reliability

Year:

1997

Language:

english

File:

PDF, 996 KB

english, 1997

11

Transient Radiation Response of Single- and Multiple-Gate FD SOI Transistors

Gaillardin, Marc, Paillet, Philippe, Ferlet-Cavrois, Veronique, Baggio, Jacques, McMorrow, Dale, Faynot, Olivier, Jahan, Carine, Tosti, Lucie, Cristoloveanu, Sorin

Journal:

IEEE Transactions on Nuclear Science

Year:

2007

Language:

english

File:

PDF, 1.12 MB

english, 2007

12

Enhanced coupling effects in vertical double-gate FinFETs

Chang, Sung-Jae, Bawedin, Maryline, Guo, Yufeng, Liu, Fanyu, Akarvardar, Kerem, Lee, Jong-Hyun, Lee, Jung-Hee, Ionica, Irina, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 5.06 MB

english, 2014

13

Silicon-On-Insulator (SOI) Technology || Characterization of the electrical properties of advanced silicon-on-insulator (SOI) materials and transistors

Cristoloveanu, S.

Year:

2014

Language:

english

File:

PDF, 1019 KB

english, 2014

14

Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes

Besnard, G., Garros, X., Andrieu, F., Nguyen, P., Van Den Daele, W., Reynaud, P., Schwarzenbach, W., Delprat, D., Bourdelle, K.K., Reimbold, G., Cristoloveanu, S.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.12 MB

english, 2015

15

[IEEE 2009 International Semiconductor Conference (CAS 2009) - Sinaia, Romania (2009.10.12-2009.10.14)] 2009 International Semiconductor Conference - Characterization, modelling and simulation of Sub-45nm SOI devices

Rodriguez, Noel, Gamiz, Francisco, Cristoloveanu, Sorin

Year:

2009

Language:

english

File:

PDF, 644 KB

english, 2009

16

Current Collapse-Free and Self-Heating Performances in Normally-Off GaN Nanowire GAA-MOSFETs

Im, Ki-Sik, Atmaca, Gokhan, Won, Chul-Ho, Caulmilone, Raphael, Cristoloveanu, Sorin, Kim, Yong-Tae, Lee, Jung-Hee

Journal:

IEEE Journal of the Electron Devices Society

Year:

2018

Language:

english

File:

PDF, 551 KB

english, 2018

17

[IEEE 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Granada (2018.3.19-2018.3.21)] 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration

Benea, Licinius, Cerba, Tiphaine, Bawedin, Maryline, Delacour, Cecile, Cristoloveanu, Sorin, Ionica, Irina

Year:

2018

Language:

english

File:

PDF, 451 KB

english, 2018

18

Topology and design investigation on thin film silicon BIMOS device for ESD protection in FD-SOI technology

Galy, Ph., de Conti, L., Delahaye, G., Anghel, L., Vinet, M., Cristoloveanu, S.

Journal:

Microelectronics Reliability

Year:

2019

File:

PDF, 3.40 MB

2019

19

Measurement and modeling of drain current DLTS in enhancement SOI MOSFETs

H. Haddara, M.T. Elewa, S. Cristoloveanu

Journal:

Microelectronics Journal

Year:

1993

Language:

english

File:

PDF, 675 KB

english, 1993

20

A comparison of MOSFETs aging under d.c., a.c. and alternating stress conditions

Nathalie Revil, Sorin Cristoloveanu, Patrick Mortini

Journal:

Microelectronics Reliability

Year:

1993

Language:

english

File:

PDF, 525 KB

english, 1993

21

Defect localization induced by hot carrier injection in short-channel MOSFETs: Concept, modeling and characterization

Sorin Cristoloveanu, Hisham Haddara, Nathalie Revil

Journal:

Microelectronics Reliability

Year:

1993

Language:

english

File:

PDF, 1.14 MB

english, 1993

22

A three-piece model of channel length modulation in submicrometer MOSFETs

Chien Nguyen-Duc, Sorin Cristoloveanu, Gérard Ghibaudo

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 700 KB

english, 1988

23

Transport profiles, the influence of internal stress and potential fluctuations in thin silicon films on sapphire

Jong-Hyun Lee, Sorin Cristoloveanu, Alain Chovet

Journal:

Thin Solid Films

Year:

1982

Language:

english

File:

PDF, 268 KB

english, 1982

24

Depth profiles of the optical properties of buried oxides (SIMOX) by ellipsometry

M. Levy, E. Scheid, S. Cristoloveanu, P. Hemment

Journal:

Thin Solid Films

Year:

1987

Language:

english

File:

PDF, 428 KB

english, 1987

25

Generation and annihilation of thermal donors in silicon thin films formed by oxygen implantation

F. Vettese, J. Sicart, J.L. Robert, S. Cristoloveanu, J. Margail, C. Jaussaud

Journal:

Thin Solid Films

Year:

1990

Language:

english

File:

PDF, 606 KB

english, 1990

26

Towards higher sensitivity of magnetic transducers based on carrier magnetoconcentration

S. Cristoloveanu, A. Chovet, V.K. Malyutenko

Journal:

Sensors and Actuators

Year:

1983

Language:

english

File:

PDF, 490 KB

english, 1983

27

High-temperature performance of state-of-the-art triple-gate transistors

K. Akarvardar, A. Mercha, E. Simoen, V. Subramanian, C. Claeys, P. Gentil, S. Cristoloveanu

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 378 KB

english, 2007

28

Interface coupling effects in thin silicon-on-insulator MOSFET's

T. Ouisse, S. Cristoloveanu, T. Elewa, B. Boukriss, A. Chovet

Journal:

Superlattices and Microstructures

Year:

1990

Language:

english

File:

PDF, 526 KB

english, 1990

29

Analysis of SIMOX metal-oxide-semiconductor transistors operated in the high temperature range

T. Ouisse, G. Reichert, S. Cristoloveanu, O. Faynot, B. Giffard

Journal:

Materials Science and Engineering: B

Year:

1995

Language:

english

File:

PDF, 233 KB

english, 1995

30

Subthreshold slope modulation in G4-FET transistors

B. Dufrene, B. Blalock, S. Cristoloveanu, K. Akarvardar, T. Higashino, M. Mojarradi

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 299 KB

english, 2004

31

Transition from partial to full depletion in advanced SOI MOSFETs: Impact of channel length and temperature

S. Zaouia, S. Cristoloveanu, M. Sureddin, S. Goktepeli, A.H. Perera

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 446 KB

english, 2007

32

Front- and back-channel mobility in ultrathin SOI-MOSFETs by front-gate split CV method

A. Ohata, M. Cassé, S. Cristoloveanu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 675 KB

english, 2007

33

Thin film fully-depleted SOI four-gate transistors

K. Akarvardar, S. Cristoloveanu, M. Bawedin, P. Gentil, B.J. Blalock, D. Flandre

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1.00 MB

english, 2007

34

High quality Germanium-On-Insulator wafers with excellent hole mobility

Q.T. Nguyen, J.F. Damlencourt, B. Vincent, L. Clavelier, Y. Morand, P. Gentil, S. Cristoloveanu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 675 KB

english, 2007

35

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

W. Chaisantikulwat, M. Mouis, G. Ghibaudo, S. Cristoloveanu, J. Widiez, M. Vinet, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 284 KB

english, 2007

36

A systematic investigation of work function in advanced metal gate–HfO2–SiO2 structures with bevel oxide

Atsushi Kuriyama, Jérôme Mitard, Olivier Faynot, Laurent Brévard, Laurence Clerc, Amélie Tozzo, Vincent Vidal, Simon Deleonibus, Hiroshi Iwai, Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

2007

Language:

english

File:

PDF, 1012 KB

english, 2007

37

Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs

K.-I. Na, S. Cristoloveanu, Y.-H. Bae, P. Patruno, W. Xiong, J.-H. Lee

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 283 KB

english, 2009

38

Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)

C. Dupré, T. Ernst, E. Bernard, B. Guillaumot, N. Vulliet, P. Coronel, T. Skotnicki, S. Cristoloveanu, G. Ghibaudo, O. Faynot, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 1.15 MB

english, 2009

39

Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications

M. Bawedin, S. Cristoloveanu, D. Flandre, F. Udrea

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.15 MB

english, 2010

40

Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces

G. Hamaide, F. Allibert, F. Andrieu, K. Romanjek, S. Cristoloveanu

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 284 KB

english, 2011

41

Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs

W. Van Den Daele, C. Le Royer, E. Augendre, J. Mitard, G. Ghibaudo, S. Cristoloveanu

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 1.84 MB

english, 2011

42

Special mechanisms in thin-film SOI MOSFETs

F. Balestra, S. Cristoloveanu

Journal:

Microelectronics Reliability

Year:

1997

Language:

english

File:

PDF, 933 KB

english, 1997

43

Silicon on insulator technologies and devices: from present to future

Sorin Cristoloveanu

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 327 KB

english, 2001

44

Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs

J Pretet, D Ioannou, N Subba, S Cristoloveanu, W Maszara, C Raynaud

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 323 KB

english, 2002

45

Channel-width dependence of floating body effects in STI- and LOCOS-isolated MOSFETS

J Pretet, N Subba, D Ioannou, S Cristoloveanu, W Maszara, C Raynaud

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 160 KB

english, 2001

46

Noise limitations of magnetodiodes

A. Chovet, S. Cristoloveanu, A. Mohaghegh, A. Dandache

Journal:

Sensors and Actuators

Year:

1983

Language:

english

File:

PDF, 474 KB

english, 1983

47

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs

Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 514 KB

english, 2011

48

Lateral coupling and immunity to substrate effect in ΩFET devices

R. Ritzenthaler, S. Cristoloveanu, O. Faynot, C. Jahan, A. Kuriyama, L. Brevard, S. Deleonibus

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 487 KB

english, 2006

49

Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state

V. Dobrovolsky, F. Sizov, S. Cristoloveanu, S. Pavljuk

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 519 KB

english, 2008

50

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

L. Pham-Nguyen, C. Fenouillet-Beranger, G. Ghibaudo, T. Skotnicki, S. Cristoloveanu

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 734 KB

english, 2010